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Author Meijer, E. J. ♦ Mangnus, A. V. G. ♦ Hart, C. M. ♦ de Leeuw, D. M. ♦ Klapwijk, T. M.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ IMPEDANCE ♦ PHYSICS ♦ RELAXATION TIME ♦ SPECTROSCOPY ♦ THIOPHENE
Abstract Metal{endash}insulator{endash}semiconductor diodes with poly(3-hexyl thiophene) as the semiconductor were characterized with impedance spectroscopy as a function of bias, frequency, and temperature. We show that the standard Mott{endash}Schottky analysis gives unrealistic values for the dopant density in the semiconductor. >From modeling of the data, we find that this is caused by the relaxation time of the semiconductor, which increases rapidly with decreasing temperature due to the thermally activated conductivity of the poly(3-hexyl thiophene). {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 24


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