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Author Samedov, V. V.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ DISTRIBUTION FUNCTIONS ♦ ELECTRODES ♦ ELECTRON CAPTURE ♦ ELECTRON TRANSFER ♦ ELECTRONS ♦ FLUCTUATIONS ♦ GEOMETRY ♦ SEMICONDUCTOR MATERIALS ♦ SIGNALS ♦ TEMPERATURE RANGE 0273-0400 K
Abstract Detectors with hemispherical geometry are used to eliminate the contribution from the hole component to the signal of a detector based on a compound semiconductor operating at room temperature. In this work, the random process of charge induction on electrodes of a detector with hemispherical geometry is theoretically considered with allowance for capture of electrons by traps. Formulas are obtained for the first two moments of the distribution function for the induced charge on the detector electrodes. These formulas help analyze the contribution of the electron transport in detectors with hemispherical geometry.
ISSN 10637788
Educational Use Research
Learning Resource Type Article
Publisher Date 2017-12-15
Publisher Place United States
Journal Physics of Atomic Nuclei
Volume Number 80
Issue Number 10


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