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Author Gehrke, Hans-Gregor ♦ Nix, Anne-Katrin ♦ Hofsaess, Hans ♦ Krauser, Johann ♦ Trautmann, Christina ♦ Weidinger, Alois
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ NANOSCIENCE AND NANOTECHNOLOGY ♦ AMORPHOUS STATE ♦ CARBON ♦ ETCHING ♦ FABRICATION ♦ FIELD EMISSION ♦ GEV RANGE ♦ HEAVY IONS ♦ ION BEAMS ♦ IRRADIATION ♦ LAYERS ♦ MATRIX MATERIALS ♦ PHYSICAL RADIATION EFFECTS ♦ PLASMA ♦ POLYCARBONATES ♦ QUANTUM WIRES ♦ SILICON ♦ SILICON NITRIDES ♦ SPUTTERING ♦ SUBSTRATES ♦ BEAMS ♦ CARBON COMPOUNDS ♦ CARBONATES ♦ CHARGED PARTICLES ♦ ELEMENTS ♦ EMISSION ♦ ENERGY RANGE ♦ IONS ♦ MATERIALS ♦ NANOSTRUCTURES ♦ NITRIDES ♦ NITROGEN COMPOUNDS ♦ NONMETALS ♦ ORGANIC COMPOUNDS ♦ ORGANIC POLYMERS ♦ OXYGEN COMPOUNDS ♦ PNICTIDES ♦ POLYMERS ♦ RADIATION EFFECTS ♦ SEMIMETALS ♦ SILICON COMPOUNDS ♦ SURFACE FINISHING
Abstract In tetrahedral amorphous carbon (ta-C) swift heavy ions create conducting tracks of about 8 nm in diameter. To apply these nanowires and implement them into nanodevices, they have to be contacted and gated. In the present work, we demonstrate the fabrication of conducting vertical nanostructures in ta-C together with self-aligned gate electrodes. A multilayer assembly is irradiated with GeV heavy ions and subsequently exposed to several selective etching processes. The samples consist of a Si wafer as substrate covered by a thin ta-C layer. On top is deposited a SiN{sub x} film for insulation, a Cr layer as electrode, and finally a polycarbonate film as ion track template. Chemical track etching opens nanochannels in the polymer which are self-aligned with the conducting tracks in ta-C because they are produced by the same ions. Through the pores in the polymer template, the Cr and SiN{sub x} layers are opened by ion beam sputtering and plasma etching, respectively. The resulting structure consists of nanowires embedded in the insulating carbon matrix with a built in gate electrode and has potential application as gated field emission cathode.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-05-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 107
Issue Number 9


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