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Author Liu, Xinke ♦ He, Jiazhu ♦ Chen, Le ♦ Li, Kuilong ♦ Jia, Fang ♦ Zeng, Yuxiang ♦ Lu, Youming ♦ Zhu, Deliang ♦ Liu, Wenjun ♦ Zhang, Yuan ♦ Liu, Qiang ♦ Yu, Wenjie ♦ Wu, Jing ♦ He, Zhubing ♦ Ang, Kah-Wee
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALIGNMENT ♦ CHEMICAL VAPOR DEPOSITION ♦ DEPOSITS ♦ DIPOLES ♦ FILMS ♦ FLUOROFORM ♦ INTERFACES ♦ LAYERS ♦ MOLYBDENUM SULFIDES ♦ PLASMA ♦ RESOLUTION ♦ SILICON OXIDES ♦ VALENCE ♦ X-RAY PHOTOELECTRON SPECTROSCOPY ♦ ZINC OXIDES
Abstract The energy band alignment between ZnO and multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the ZnO/ML-MoS{sub 2} interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF{sub 3} plasma treatment, the band alignment of the ZnO/ML-MoS{sub 2} interface has been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-15
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 7


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