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Author Hollinger, R. ♦ Zolfl, M. ♦ Moosbuhler, R. ♦ Bayreuther, G.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ ANISOTROPY ♦ CRITICAL TEMPERATURE ♦ ELECTRON DIFFRACTION ♦ MOLECULAR BEAM EPITAXY ♦ PHYSICS ♦ REFLECTION ♦ SPIN ♦ THICKNESS
Abstract Epitaxial Fe films in a thickness range from 4 to 64 monolayers (ML) were grown by molecular beam epitaxy on GaAs(110) at room temperature. The growth was characterized by reflection high energy electron diffraction. The magnetic in-plane anisotropy was investigated by alternating gradient magnetometry in a temperature range from 150 to 295 K. For a 64 ML thick Fe(110) film the [001] axis is the easy axis, the [{minus}110] the intermediate axis, and the hard axis is between [{minus}110] and [{minus}111]. For Fe films with a thickness below 24.2{+-}1.2 ML the [{minus}110] becomes an easy axis at room temperature. A 24 ML Fe film shows a reorientation of the easy axis with decreasing temperature: Above the critical temperature of (251{+-}3) K [{minus}110] is the easy axis, for lower temperatures it becomes an intermediate axis. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 11


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