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Author Yan, Shiming ♦ Ou, Haifeng ♦ Zhang, Liying ♦ He, Jie ♦ Yu, Jingxin
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CHARGE CARRIERS ♦ CONCENTRATION RATIO ♦ DOPED MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRONS ♦ EXCHANGE INTERACTIONS ♦ FERROMAGNETISM ♦ FLUORINE ♦ HALL EFFECT ♦ INDIUM COMPOUNDS ♦ IRON OXIDES ♦ MAGNETIC MATERIALS ♦ MAGNETIC PROPERTIES ♦ ORGANIC FLUORINE COMPOUNDS ♦ PARAMAGNETISM ♦ POLYVINYLS ♦ X-RAY DIFFRACTION
Abstract Highlights: • F doping was achieved by a process of low temperature reaction with PVDF. • RTFM was obtained in the F-doped (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3.} • Magnetism and electric resistivity can be controlled by the content of doped F. • The FM can be ascribed to a long range exchange interaction induced by carriers. - Abstract: Ferromagnetism in (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3} was obtained by fluorine (F) doping. The ferromagnetism can be controlled by changing the electron carrier concentration via F doping. With increasing the F concentration, the electron carrier concentration increases, and samples undergo a paramagnetic insulator to ferromagnetic metal transition. For the ferromagnetic samples, the anomalous Hall effect (AHE) was observed. These results indicate that electron carriers play an important role in inducing the ferromagnetism.
ISSN 00255408
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-01-15
Publisher Place United States
Journal Materials Research Bulletin
Volume Number 61


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