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Author Berrada, Salim ♦ Bescond, Marc ♦ Cavassilas, Nicolas ♦ Raymond, Laurent ♦ Lannoo, Michel
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIERS ♦ CONFINEMENT ♦ CONTROL ♦ DIELECTRIC MATERIALS ♦ DOPED MATERIALS ♦ ENGINEERING ♦ MONITORING ♦ SHAPE ♦ SIMULATION ♦ TRANSISTORS
Abstract This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-10-12
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 15


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