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Author Li, Y. ♦ Ren, C. ♦ Chen, G. ♦ Chen, J. ♦ Zou, S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BARIUM OXIDES ♦ ION IMPLANTATION ♦ SUPERCONDUCTIVITY ♦ COPPER OXIDES ♦ YTTRIUM OXIDES ♦ ARGON IONS ♦ HIGH-TC SUPERCONDUCTORS ♦ JOSEPHSON JUNCTIONS ♦ SUPERCONDUCTING FILMS ♦ TRANSITION TEMPERATURE ♦ ALKALINE EARTH METAL COMPOUNDS ♦ BARIUM COMPOUNDS ♦ CHALCOGENIDES ♦ CHARGED PARTICLES ♦ COPPER COMPOUNDS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRICAL PROPERTIES ♦ FILMS ♦ IONS ♦ JUNCTIONS ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ PHYSICAL PROPERTIES ♦ SUPERCONDUCTING JUNCTIONS ♦ SUPERCONDUCTORS ♦ THERMODYNAMIC PROPERTIES ♦ TRANSITION ELEMENT COMPOUNDS ♦ YTTRIUM COMPOUNDS ♦ Ceramics, Cermets, & Refractories- Radiation Effects ♦ Ceramics, Cermets, & Refractories- Physical Properties ♦ Condensed Matter Physics- Superconductivity
Abstract The superconducting transport properties of high-quality epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin films have been controllably modified using Ar{sup +} ion implantation. It was found that both the critical current density {ital J}{sub {ital c}} and the superconducting transition temperature {ital T}{sub {ital c}} significantly decreased with fluence. However, when {ital J}{sub {ital c}} (at 77 K, {ital H}=0) decreased by six orders of magnitude, {ital T}{sub {ital c}} only decreased from 89 to 77.5 K. A fluence of 5{times}10{sup 12} Ar/cm{sup 2} was sufficient to reduce {ital J}{sub {ital c}} near zero, but {ital T}{sub {ital c}} still remained above 77 K. We have observed the structure and the morphology of the sample using x-ray diffraction and high-resolution transmission electron microscopy. A film irradiated with Ar{sup +} ions became semiconductor at a bombardment fluence of about 1.2{times}10{sup 13} Ar/cm{sup 2}, while its superconducting state completely disappeared for an Ar{sup +} dose of about 2.2{times}10{sup 13} Ar/cm{sup 2}. An Ar{sup +} fluence of 5{times}10{sup 14} Ar/cm{sup 2} made the sample amorphous with so high resistivity that it could be treated as insulator. The experimental results showed the possibility of fabricating Josephson junction devices from YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} superconducting thin films and patterning this kind of films by ion implantation technique.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1991-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 69
Issue Number 11


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