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Author Mohapatra, P. K. ♦ Deb, S. ♦ Singh, B. P. ♦ Vasa, P. ♦ Dhar, S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CHEMICAL VAPOR DEPOSITION ♦ EV RANGE ♦ FILMS ♦ MOLYBDENUM SULFIDES ♦ PHOTOLUMINESCENCE ♦ SEMICONDUCTOR MATERIALS ♦ SILICON OXIDES ♦ SUBSTRATES ♦ SYNTHESIS
Abstract Despite a tremendous interest on molybdenum disulfide as a thinnest direct band gap semiconductor, single step synthesis of a large area purely monolayer MoS{sub 2} film has not yet been reported. Here, we report a CVD route to synthesize a continuous film of strictly monolayer MoS{sub 2} covering an area as large as a few cm{sup 2} on a variety of different substrates without using any seeding material or any elaborate pretreatment of the substrate. This is achieved by allowing the growth to take place in the naturally formed gap between a piece of SiO{sub 2} coated Si wafer and the substrate, when the latter is placed on top of the former inside a CVD reactor. We propose a qualitative model to explain why the MoS{sub 2} films are always strictly monolayer in this method. The photoluminescence study of these monolayers shows the characteristic excitonic and trionic features associated with monolayer MoS{sub 2}. In addition, a broad defect related luminescence band appears at ∼1.7 eV. As temperature decreases, the intensity of this broad feature increases, while the band edge luminescence reduces.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-01-25
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 4


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