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Author Fu, Dong ♦ Song, Jiakun ♦ Yu, Hailong ♦ Zhang, Zuyin ♦ Wang, Wenbo ♦ Xu, Yun ♦ Song, Guofeng ♦ Wei, Xin ♦ Liu, Jietao
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ABSORPTION ♦ CYLINDERS ♦ DIELECTRIC MATERIALS ♦ GALLIUM ARSENIDES ♦ INDIUM ARSENIDES ♦ INDIUM PHOSPHIDES ♦ NANOSTRUCTURES ♦ OPTOELECTRONIC DEVICES ♦ PHOTODETECTORS ♦ PHOTOVOLTAIC EFFECT ♦ QUANTUM EFFICIENCY ♦ RESONATORS ♦ SEMICONDUCTOR MATERIALS ♦ SIMULATION ♦ SURFACES ♦ THIN FILMS
Abstract High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In{sub 0.53}Ga{sub 0.47}As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency is as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 10


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