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Author Tilke, A. ♦ Blick, R. H. ♦ Lorenz, H. ♦ Kotthaus, J. P.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONFIGURATION ♦ DIMENSIONS ♦ ELECTRODES ♦ ELECTRONS ♦ ISLANDS ♦ OSCILLATIONS ♦ PHYSICS ♦ SILICON ♦ TUNNELING
Abstract Lateral patterning of highly doped silicon-on-insulator films allows us to observe conductance oscillations due to single-electron charging effects. In our devices, silicon nanostructures are embedded into a metal{endash}oxide{endash}silicon configuration. The single-electron effects can be tuned both by an in-plane sidegate, as well as by a metallic topgate, a technology which is compatible with large-scale integration of single-electron devices with dimensions down to 10 nm. We compare the influence of different gating electrodes, important for ultralarge scale integration, on the electron islands. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 12


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