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Author Pacebutas, V. ♦ Stalnionis, A. ♦ Krotkus, A. ♦ Suski, T. ♦ Perlin, P. ♦ Leszczynski, M.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ABSORPTION ♦ ELECTRONS ♦ LASERS ♦ PHYSICS ♦ REFRACTIVE INDEX
Abstract Bulk GaN crystals were characterized by using picosecond laser pulses at {lambda}=0.527{mu}m and Z-scan techniques. The role of the free-carrier absorption was evaluated by a dynamical, pump-and-probe-type transmitivity measurement. The values of two-photon absorption coefficient (17{endash}20 cm/GW) and refractive index changes at high optical irradiances due to bound (n{sub 2}={minus}4{times}10{sup {minus}12}esu) and free ({sigma}{sub r}={minus}1.0{times}10{sup {minus}20}cm{sup 3}) electrons in that material were determined. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-25
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 26


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