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Author Gassmann, A. ♦ Suski, T. ♦ Newman, N. ♦ Kisielowski, C. ♦ Jones, E. ♦ Weber, E. R. ♦ Liliental-Weber, Z. ♦ Rubin, M. D. ♦ Helava, H. I. ♦ Grzegory, I. ♦ Bockowski, M. ♦ Jun, J. ♦ Porowski, S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM NITRIDES ♦ MOLECULAR BEAM EPITAXY ♦ ALKYLATING AGENTS ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ PHOTOLUMINESCENCE ♦ EXCITONS ♦ THIN FILMS ♦ CRYSTAL STRUCTURE
Abstract In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-08-01
Publisher Department Lawrence Berkeley National Laboratory
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 80
Issue Number 4
Organization Lawrence Berkeley National Laboratory


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