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Author Al-Shareef, H. N. ♦ Karamcheti, A. ♦ Luo, T. Y. ♦ Bersuker, G. ♦ Brown, G. A. ♦ Murto, R. W. ♦ Jackson, M. D. ♦ Huff, H. R. ♦ Kraus, P. ♦ Lopes, D.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ DIELECTRIC MATERIALS ♦ LEAKAGE CURRENT ♦ NITRIDATION ♦ OXIDATION ♦ OXIDES ♦ PERFORMANCE ♦ RELIABILITY ♦ STEAM ♦ TRANSISTORS
Abstract In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 24


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