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Author Fischer, S. ♦ Wetzel, C. ♦ Hansen, W. L. ♦ Bourret-Courchesne, E. D. ♦ Meyer, B. K. ♦ Haller, E. E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM NITRIDES ♦ VAPOR PHASE EPITAXY ♦ FILMS ♦ X-RAY DIFFRACTION ♦ CRYSTAL STRUCTURE ♦ PHOTOLUMINESCENCE ♦ CRYSTAL DEFECTS ♦ XRD ♦ VPE ♦ GROWTH RATE
Abstract Thick GaN films were deposited with growth rates as high as 250 {mu}m/h by the direct reaction of ammonia and gallium vapor at 1240{degree}C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy. Grown under identical conditions, films on (0001) sapphire and on (0001) 6H{endash}SiC were compared in terms of their structural and optical properties. Considering x-ray rocking curve full width at half-maximum (FWHM: 420 arcsec), photoluminescence linewidths of the excitons (FWHM: 3 meV at 6 K and 100 meV at 300 K), free electron concentration, defect related luminescence, and the homogeneity of these properties, we find superior values for films grown on SiC. For both substrate materials we find an optimum growth rate window of 40{endash}80 {mu}m/h. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-10-01
Publisher Department Lawrence Berkeley National Laboratory
Publisher Place United States
Journal Applied Physics Letters
Volume Number 69
Issue Number 18
Organization Lawrence Berkeley National Laboratory


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