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Author Tandon, Nandan ♦ Albrecht, J. D. ♦ Ram-Mohan, L. R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIERS ♦ DISPERSIONS ♦ ELECTRON-PHONON COUPLING ♦ ELECTRONS ♦ ENERGY RANGE ♦ GERMANIUM ♦ MATRIX ELEMENTS ♦ ORIENTATION ♦ PHONONS ♦ SCATTERING ♦ SELF-ENERGY ♦ SILICON ♦ TEMPERATURE DEPENDENCE
Abstract We report ab-initio results for electron-phonon (e-ph) coupling and display the existence of a large variation in the coupling parameter as a function of electron and phonon dispersion. This variation is observed for all phonon modes in Si and Ge, and we show this for representative cases where the initial electron states are at the band gap edges. Using these e-ph matrix elements, which include all possible phonon modes and electron bands within a relevant energy range, we evaluate the imaginary part of the electron self-energy in order to obtain the associated scattering rates. The temperature dependence is seen through calculations of the scattering rates at 0 K and 300 K. The results provide a basis for understanding the impacts of phonon scattering vs. orientation and geometry in the design of devices, and in analysis of transport phenomena. This provides an additional tool for engineering the transfer of energy from carriers to the lattice.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 4


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