Thumbnail
Access Restriction
Open

Author Mares, J. W. ♦ Boutwell, R. C. ♦ Wei, M. ♦ Scheurer, A. ♦ Schoenfeld, W. V.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CONCENTRATION RATIO ♦ CRYSTAL GROWTH ♦ CRYSTAL LATTICES ♦ DEPOSITION ♦ ELECTRIC CURRENTS ♦ ELECTRON DIFFRACTION ♦ MAGNESIUM OXIDES ♦ MOLECULAR BEAM EPITAXY ♦ NICKEL COMPOUNDS ♦ PHOTODETECTORS ♦ REFLECTION ♦ RUTHERFORD BACKSCATTERING SPECTROSCOPY ♦ SEMICONDUCTOR MATERIALS ♦ SUBSTRATES ♦ THIN FILMS ♦ ULTRAVIOLET RADIATION ♦ ULTRAVIOLET SPECTRA ♦ VISIBLE SPECTRA ♦ X-RAY DIFFRACTION ♦ ALKALINE EARTH METAL COMPOUNDS ♦ CHALCOGENIDES ♦ COHERENT SCATTERING ♦ CRYSTAL GROWTH METHODS ♦ CRYSTAL STRUCTURE ♦ CURRENTS ♦ DIFFRACTION ♦ DIMENSIONLESS NUMBERS ♦ ELECTROMAGNETIC RADIATION ♦ EPITAXY ♦ FILMS ♦ MAGNESIUM COMPOUNDS ♦ MATERIALS ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ RADIATIONS ♦ SCATTERING ♦ SPECTRA ♦ SPECTROSCOPY ♦ TRANSITION ELEMENT COMPOUNDS
Abstract Deep-ultraviolet (DUV) photodetectors were fabricated from high quality Ni{sub x}Mg{sub 1-x}O epitaxially grown by plasma-assisted molecular beam epitaxy on an approximately lattice matched MgO <100> substrate. A mid-range Ni composition (x=0.54) Ni{sub x}Mg{sub 1-x}O film was grown for DUV ({lambda}{sub peak}<300 nm) photoresponse and the film was characterized by reflected high-energy electron diffraction, Rutherford backscattering spectroscopy, x-ray diffraction, and optical transmission measurements. Photoconductive detectors were then fabricated by deposition of symmetric interdigitated contacts (10 nm Pt/150 nm Au) with contact separations of 5, 10, and 15 {mu}m. The detectors exhibited peak responsivities in the DUV ({lambda}{sub peak{approx_equal}}250 nm) as high as 12 mA/W, low dark currents (I{sub dark}<25 nA), and DUV:visible rejection ratio of approximately 800:1.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-10-18
Publisher Place United States
Journal Applied Physics Letters
Volume Number 97
Issue Number 16


Open content in new tab

   Open content in new tab