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Author White, C. W. ♦ Budai, J. D. ♦ Zhu, J. G. ♦ Withrow, S. P. ♦ Aziz, M. J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ COMPOSITE MATERIALS ♦ SYNTHESIS ♦ SILICON ♦ GALLIUM ADDITIONS ♦ ARSENIC ADDITIONS ♦ ION IMPLANTATION ♦ FABRICATION ♦ GALLIUM ARSENIDES ♦ ANNEALING ♦ NANOSTRUCTURES
Abstract Sequential implantation of Ga and As into silicon followed by thermal annealing has been used to synthesize GaAs buried inside silicon. The GaAs exists in the form of nanocrystals which are three-dimensionally oriented with respect to the silicon matrix. Thermodynamic criteria which are important in determining whether the desired compound will form are discussed. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-04-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 68
Issue Number 17


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