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Author Wellekens, D. ♦ Groeseneken, G. ♦ Van Houdt, J. ♦ Maes, H.E.
Sponsorship IEEE Nuclear and Plasma Sciences Society ♦ Computer Applications in Nuclear and Plasma Sciences (CANPS) ♦ Lawrence Berkeley Lab. ♦ Lawrence Livermore Nat. Lab. ♦ APS ♦ College of William and Mary ♦ Continuous Electron Beam Accelerator Facility ♦ NASA ♦ Defence Nuclear Agency ♦ Sandia National Laboratories ♦ Jet Propulsion Laboratory ♦ Brookhaven Nat. Lab. ♦ Lawrence Livermore Nat. Lab ♦ IEEE/NPPS Radiat. Effects Committee ♦ Defence Nuclear Agency/DoD ♦ Sandia National Laboratories/DOE ♦ Jet Propulsion Laboratory/NASA ♦ Phillips Lab./DoD
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1963
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Modern physics ♦ Technology ♦ Medicine & health ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword EPROM ♦ Nonvolatile memory ♦ Space technology ♦ Silicon ♦ Semiconductor process modeling ♦ Threshold voltage ♦ Tunneling ♦ Capacitors ♦ Ionizing radiation ♦ Control systems
Abstract The total dose radiation response of two classes of floating gate nonvolatile memory devices is examined. While the hardness of commonly studied double polysilicon cells is restricted to a few kilorads, devices having only one polysilicon layer are shown to be much more radiation-hard. This is mainly due to the thinner oxide that can be used in the coupling capacitor of such cells. It is also shown that the contribution of the field oxide regions, present under the floating gate of the cells, is of major importance for their radiation response. The programming behavior of the devices is shown to remain fairly unaffected by the ionizing radiation.<<ETX>>
Description Author affiliation :: IMEC, Leuven, Belgium
ISSN 00189499
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1993-12-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 40
Issue Number 6
Size (in Bytes) 854.54 kB
Page Count 9
Starting Page 1619
Ending Page 1627


Source: IEEE Xplore Digital Library