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Author Qin, X. R. ♦ Lagally, M. G.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ SCANNING ELECTRON MICROSCOPY ♦ SURFACES ♦ IMAGES ♦ ELECTRONIC STRUCTURE
Abstract It is shown that the use of very-low-bias voltages in scanning tunneling microscopy of the Si(100)-2{times}1 surface achieves significantly greater sensitivity to the electronic states of the top atomic layer than does the use of typical larger bias voltages. Measurements with the increased sensitivity demonstrate that the conventional interpretation of empty-state images of Si(100) is inadequate. New spectroscopic assignments for observed features are proposed. {copyright} {ital 1999} {ital The American Physical Society}
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Place United States
Journal Physical Review, B: Condensed Matter
Volume Number 59
Issue Number 11


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