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Author Hasanah, Lilik ♦ Suhendi, Endi ♦ Tayubi, Yuyu Rahmat ♦ Yuwono, Heru ♦ Nandiyanto, Asep Bayu Dani ♦ Murakami, Hideki ♦ Khairrurijal
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CURRENTS ♦ HETEROJUNCTIONS ♦ INTERFACES ♦ ROUGHNESS ♦ SUBSTRATES ♦ SURFACES ♦ TRANSISTORS ♦ TUNNEL EFFECT
Abstract In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-02-08
Publisher Place United States
Volume Number 1708
Issue Number 1


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