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Author Teraji, Tokuyuki
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARBON 12 ♦ DEFECTS ♦ DIAMONDS ♦ IMPURITIES ♦ ISOTOPE RATIO ♦ MICROWAVE RADIATION ♦ MONOCRYSTALS ♦ OXYGEN ♦ POWER DENSITY ♦ THICKNESS
Abstract Defect formation during diamond homoepitaxial growth was sufficiently inhibited by adding oxygen simultaneously in the growth ambient with high concentration of 2%. A 30-μm thick diamond films with surface roughness of <2 nm were homoepitaxially deposited on the (100) diamond single crystal substrates with reasonable growth rate of approximately 3 μm h{sup −1} under the conditions of higher methane concentration of 10%, higher substrate temperature of ∼1000 °C, and higher microwave power density condition of >100 W cm{sup −3}. Surface characteristic patterns moved to an identical direction with growth thickness, indicating that lateral growth was dominant growth mode. High chemical purity represented by low nitrogen concentration of less than 1 ppb and the highest {sup 12}C isotopic ratio of 99.998% of the obtained homoepitaxial diamond (100) films suggest that the proposed growth condition has high ability of impurity control.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-21
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 11


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