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Author Zhu, Bao ♦ Liu, Wen-Jun ♦ Wei, Lei ♦ Zhang, David Wei ♦ Jiang, Anquan ♦ Ding, Shi-Jin
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM OXIDES ♦ CAPACITORS ♦ DEPOSITION ♦ ELECTRIC POTENTIAL ♦ LAYERS ♦ LEAKAGE CURRENT ♦ METALS ♦ PERFORMANCE ♦ RADIOWAVE RADIATION ♦ SILICON OXIDES ♦ THICKNESS ♦ TRAPS ♦ TUNNEL EFFECT ♦ ZIRCONIUM OXIDES
Abstract Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 1


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