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Author Li, Guochang ♦ Chen, George ♦ Li, Shengtao
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ABUNDANCE ♦ CHARGE TRANSPORT ♦ CONCENTRATION RATIO ♦ LOADING ♦ NANOSTRUCTURES ♦ TRANSPORT THEORY ♦ TRAPS ♦ TUNNEL EFFECT
Abstract Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loading concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-08
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 6


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