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Author Zhang, Hai-Tian ♦ Eaton, Craig ♦ Ye, Hansheng ♦ Engel-Herbert, Roman
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM OXIDES ♦ EPITAXY ♦ FUNCTIONS ♦ OPTIMIZATION ♦ SURFACES ♦ SYNTHESIS ♦ THIN FILMS ♦ VANADIUM ♦ VANADIUM OXIDES
Abstract A new growth approach to stabilize VO{sub 2} on Al{sub 2}O{sub 3} in high vacuum is reported by reducing vanadium oxytriisopropoxide (VTIP) with vanadium metal. Phase stabilization and surface wetting behavior were studied as a function of growth parameters. The flux balance of VTIP to V in combination with growth temperature was identified to be critical for the growth of high quality VO{sub 2} thin films. High V fluxes were required to suppress the island formation and to ensure a coalesced film, while too high V fluxes ultimately favored the formation of the undesired, epitaxially stabilized V{sub 2}O{sub 3} phase. Careful optimization of growth temperature, VTIP to V ratio, and growth rate led to high quality single phase VO{sub 2} thin films with >3.5 orders of magnitude change in resistivity across the metal-to-insulator transition. This approach opens up another synthesis avenue to stabilize oxide thin films into desired phases.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-11-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 18


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