Thumbnail
Access Restriction
Open

Author Dong, Juan ♦ Shi, Jiangjian ♦ Li, Dongmei ♦ Luo, Yanhong ♦ Meng, Qingbo
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ BOUNDARY CONDITIONS ♦ CARRIERS ♦ DIFFUSION EQUATIONS ♦ DOPED MATERIALS ♦ EV RANGE ♦ INTERFACES ♦ NANOSTRUCTURES ♦ OPTIMIZATION ♦ PEROVSKITE ♦ RECOMBINATION ♦ SOLAR CELLS ♦ ZINC OXIDES
Abstract The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE{sub C}) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE{sub C} of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-17
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 7


Open content in new tab

   Open content in new tab