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Author Delice, S. ♦ Isik, M. ♦ Gasanly, N. M.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ACTIVATION ENERGY ♦ CAPTURE ♦ CHALCOGENIDES ♦ CROSS SECTIONS ♦ DEFECTS ♦ GALLIUM COMPOUNDS ♦ GLOW CURVE ♦ HEATING RATE ♦ MONOCRYSTALS ♦ OPTICAL PROPERTIES ♦ REFLECTION ♦ SELENIUM COMPOUNDS ♦ SPECTRA ♦ SULFUR COMPOUNDS ♦ THERMOLUMINESCENCE ♦ TRANSMISSION ♦ TRAPS ♦ WAVELENGTHS
Abstract Highlights: • Optical and thermoluminescence properties of Ga{sub 4}S{sub 3}Se crystals were investigated. • Indirect and direct band gap energies were found as 2.39 and 2.53 eV, respectively. • The activation energy of the trap center was determined as 495 meV. - Abstract: Optical and thermoluminescence properties on GaS{sub 0.75}Se{sub 0.25} crystals were investigated in the present work. Transmission and reflection measurements were performed at room temperature in the wavelength range of 400–1000 nm. Analysis revealed the presence of indirect and direct transitions with band gap energies of 2.39 and 2.53 eV, respectively. TL spectra obtained at low temperatures (10–300 K) exhibited one peak having maximum temperature of 168 K. Observed peak was analyzed using curve fitting, initial rise and peak shape methods to calculate the activation energy of the associated trap center. All applied methods were consistent with the value of 495 meV. Attempt-to-escape-frequency and capture cross section of the trap center were determined using the results of curve fitting. Heating rate dependence studies of the glow curve in the range of 0.4–0.8 K/s resulted with decrease of TL intensity and shift of the peak maximum temperature to higher values.
ISSN 00255408
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-10-15
Publisher Place United States
Journal Materials Research Bulletin
Volume Number 70


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