Thumbnail
Access Restriction
Open

Author De, Arpan ♦ Tangi, Malleswararao ♦ Shivaprasad, S. M.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CATALYSTS ♦ ELECTRON DIFFRACTION ♦ FIELD EMISSION ♦ MOLECULAR BEAM EPITAXY ♦ MONOCRYSTALS ♦ NANOSTRUCTURES ♦ NITRIDATION ♦ OPTICAL PROPERTIES ♦ PHOTOLUMINESCENCE ♦ SCANNING ELECTRON MICROSCOPY ♦ SUBSTRATES ♦ SURFACES ♦ X-RAY DIFFRACTION ♦ X-RAY PHOTOELECTRON SPECTROSCOPY
Abstract We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical properties of In{sub x}Ga{sub 1−x}N films grown by plasma assisted molecular beam epitaxy, has been studied. The nitrogen rich growth environment and surface nitridation results in the formation of vertically well-aligned single crystalline nanorods that are coalesced and isolated at 400 °C and 500 °C, respectively. In incorporation is also seen to be enhanced to ≈28% at 400 °C to yield a stable green emission, while the nanorods grown at 500 °C show blue band-edge emission. The orientation, phase separations, and optical properties characterized by Reflection High Energy Electron Diffraction, Field Emission Scanning Electron Microscopy, high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence are corroborated to understand the underlying mechanism. The study optimizes conditions to grow high quality catalyst-free well-aligned InGaN rods on nitrided Si surface, whose band-edge emission can be tuned from blue to green by sheer control of the substrate temperature.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 2


Open content in new tab

   Open content in new tab