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Author Tamboli, Adele C. ♦ Hest, Maikel F. A. M. van ♦ Steiner, Myles A. ♦ Essig, Stephanie ♦ Norman, Andrew G. ♦ Bosco, Nick ♦ Stradins, Paul ♦ Perl, Emmett E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ABSORPTION ♦ ABUNDANCE ♦ BONDING ♦ INDIUM ♦ LAYERS ♦ MATERIALS ♦ PLASMA ♦ SOLAR CELLS ♦ TEMPERATURE RANGE 0065-0273 K ♦ TRANSMISSION ♦ VISIBLE RADIATION ♦ ZINC OXIDES
Abstract We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-06-29
Publisher Place United States
Journal Applied Physics Letters
Volume Number 106
Issue Number 26


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