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Author Huang, Wen-Hsien ♦ Shen, Chang-Hong ♦ Wang, Hsing-Hsiang ♦ Yang, Chih-Chao ♦ Hsieh, Tung-Ying ♦ Hsieh, Jin-Long ♦ Yeh, Wen-Kuan ♦ Shieh, Jia-Min ♦ Huang, Tzu-En
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CHEMICAL VAPOR DEPOSITION ♦ CRYSTALLIZATION ♦ FILMS ♦ HOLES ♦ LAYERS ♦ NANOSTRUCTURES ♦ SEMICONDUCTOR JUNCTIONS ♦ SEMICONDUCTOR MATERIALS ♦ VISIBLE RADIATION
Abstract A doping-free poly-Ge film as channel material was implemented by CVD-deposited nano-crystalline Ge and visible-light laser crystallization, which behaves as a p-type semiconductor, exhibiting holes concentration of 1.8 × 10{sup 18 }cm{sup −3} and high crystallinity (Raman FWHM ∼ 4.54 cm{sup −1}). The fabricated junctionless 7 nm-poly-Ge FinFET performs at an I{sub on}/I{sub off} ratio over 10{sup 5} and drain-induced barrier lowering of 168 mV/V. Moreover, the fast programming speed of 100 μs–1 ms and reliable retention can be obtained from the junctionless poly-Ge nonvolatile-memory. Such junctionless poly-Ge devices with low thermal budget are compatible with the conventional CMOS technology and are favorable for 3D sequential-layer integration and flexible electronics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-13
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 24


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