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Author Wang, P. -C. ♦ Filippi, R. G.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ COPPER ♦ CURRENT DENSITY ♦ ELECTROPHORESIS ♦ PHYSICS
Abstract The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295{endash}400{degree}C. Based on the Blech electromigration model [I. A. Blech, J. Appl. Phys. >47, 1203 (1976)], a simplified equation is proposed to analyze the experimental data from various combinations of current density and interconnect length, as well as to estimate the electromigration threshold product of current density and line length, (jL){sub th}, at a certain temperature. The resulting (jL){sub th} value appears to be temperature dependent, decreasing with increasing temperature in the tested range between 295 and 400{degree}C. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-04
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 23


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