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Author Teherani, James T. ♦ Agarwal, Sapan ♦ Chern, Winston ♦ Antoniadis, Dimitri A. ♦ Solomon, Paul M. ♦ Yablonovitch, Eli
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ELECTRONIC EQUIPMENT ♦ LEAKAGE CURRENT ♦ MICROELECTRONICS ♦ MOSFET ♦ PERFORMANCE ♦ SIMULATION ♦ TUNNEL EFFECT
Abstract Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 120
Issue Number 8


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