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Author Kundu, Manisha ♦ Miyata, Noriyuki ♦ Ichikawa, Masakazu
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM ♦ AUGER ELECTRON SPECTROSCOPY ♦ DESORPTION ♦ ELECTRON BEAMS ♦ ELECTRON DIFFRACTION ♦ ELECTRON MICROSCOPY ♦ OXIDES ♦ OXYGEN ♦ PHYSICS ♦ REFLECTION
Abstract The mechanism of electron-beam-induced selective thermal desorption of ultrathin aluminum-oxide layer ({approx}0.4 nm) on Si(001) surface was investigated by using scanning reflection electron microscopy, reflection high-energy electron diffraction, and Auger electron spectroscopy. We found that the change in the aluminum-oxide layer composition induced by electron-stimulated oxygen desorption accounted for the selective thermal desorption of the oxide layer. A systematic increase in the vacuum-annealing temperature to 500{sup o}C, 600{sup o}C and 720{sup o}C resulted in the formation of three-dimensional metal aluminum clusters, desorption of these clusters, and creation of a nanometer-scale clean Si(001)-2 x 1 open window in the selected electron-beam-irradiated area. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-06
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 6


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