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Author Paisley, Elizabeth A. ♦ Brumbach, Michael ♦ Allerman, Andrew A. ♦ Atcitty, Stanley ♦ Baca, Albert G. ♦ Armstrong, Andrew M. ♦ Kaplar, Robert J. ♦ Ihlefeld, Jon F.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM NITRIDES ♦ EV RANGE ♦ FILMS ♦ MAGNESIUM OXIDES ♦ MOLECULAR BEAM EPITAXY ♦ SEMICONDUCTOR MATERIALS ♦ VALENCE ♦ X-RAY PHOTOELECTRON SPECTROSCOPY ♦ YIELDS
Abstract Epitaxial (111) MgO films were prepared on (0001) Al{sub x}Ga{sub 1−x}N via molecular-beam epitaxy for x = 0 to x = 0.67. Valence band offsets of MgO to Al{sub x}Ga{sub 1−x}N were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and 1.05 ± 0.09 eV for x = 0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x = 0, 0.28, and 0.67, respectively. All band offsets measured between MgO and Al{sub x}Ga{sub 1−x}N provide a > 1 eV barrier height to the semiconductor.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-07
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 10


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