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Author Hsu, J. W. P. ♦ Matthews, M. J. ♦ Abusch-Magder, D. ♦ Kleiman, R. N. ♦ Lang, D. V. ♦ Richter, S. ♦ Gu, S. L. ♦ Kuech, T. F.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ COALESCENCE ♦ DEFECTS ♦ ELECTRICAL PROPERTIES ♦ ELECTRONS ♦ FERMI LEVEL ♦ IMPURITIES ♦ PHYSICS ♦ PROBES ♦ TRANSPORT
Abstract Using confocal Raman and scanning probe microscopies, we show that the electrical properties of lateral epitaxial overgrown GaN films vary at the submicron scale. Wing regions, which are located directly above the SiO{sub x} stripes, contain carrier densities {approx}10{sup 20} cm{sup -3}, but possess a Fermi level deep in the band gap. This cannot be explained by having a high density of free electrons in the conduction band, but is consistent with high levels of compensation and impurity band transport. In the coalescence region, stripes of different electrical properties are evident, indicating the incorporation of impurities and defects being dictated by the growth dynamics. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-06
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 6


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