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Author Aleshkin, V. Ya. ♦ Dubinov, A. A. ♦ Krasilnik, Z. F. ♦ Kudryavtsev, K. E. ♦ Novikov, A. V. ♦ Yurasov, D. V. ♦ Baidus, N. V. ♦ Samartsev, I. V. ♦ Fefelov, A. G. ♦ Nekorkin, S. M. ♦ Pavlov, D. A. ♦ Sushkov, A. A. ♦ Skorokhodov, E. V. ♦ Shaleev, M. V. ♦ Yablonskiy, A. N. ♦ Yunin, P. A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM ARSENIDES ♦ BUFFERS ♦ CHEMICAL VAPOR DEPOSITION ♦ CURRENT DENSITY ♦ ELECTRICAL PUMPING ♦ GALLIUM ARSENIDES ♦ GERMANIUM ♦ INDIUM ARSENIDES ♦ LASERS ♦ MOLECULAR BEAM EPITAXY ♦ MOLECULAR BEAMS ♦ QUANTUM WELLS ♦ SILICON ♦ SUBSTRATES ♦ SURFACES ♦ TEMPERATURE RANGE 0273-0400 K ♦ THRESHOLD CURRENT ♦ VAPORS ♦ WAVELENGTHS
Abstract We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-08
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 6


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