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Author Gao, Feng ♦ Luo, Shuai ♦ Ji, Hai-Ming ♦ Xu, Feng ♦ Lv, Zun-Ren ♦ Yang, Xiao-Guang ♦ Liang, Ping ♦ Yang, Tao
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword NANOSCIENCE AND NANOTECHNOLOGY ♦ INDIUM ARSENIDES ♦ INDIUM PHOSPHIDES ♦ LANTHANUM SELENIDES ♦ LASER RADIATION ♦ POWER DENSITY ♦ QUANTUM DOTS ♦ STIMULATED EMISSION ♦ THZ RANGE 100-1000
Abstract We demonstrate the generation of 92 nm (−3 dB bandwidth) flat-topped ultrabroad stimulation emission from a chirped InAs/InP quantum dot (QD) laser. A greatly enhanced bandwidth of the gain spectrum is achieved, which is attributed to the additionally broadened quantum dot energy levels utilizing gradually changed height of QDs in the stacked active layers. The laser exhibits a maximum output power of 0.35 W under pulsed conditions, and the average spectral power density of above 3.8 mW/nm is obtained. The ultrabroad lasing spectrum in the wavelength interval of 1.49–1.61 μm covering S-C-L bands makes such a laser potentially useful as an optical source for various applications being compatible with silica fibers.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-16
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 20


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