|Author||Gao, Feng ♦ Luo, Shuai ♦ Ji, Hai-Ming ♦ Xu, Feng ♦ Lv, Zun-Ren ♦ Yang, Xiao-Guang ♦ Liang, Ping ♦ Yang, Tao|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||NANOSCIENCE AND NANOTECHNOLOGY ♦ INDIUM ARSENIDES ♦ INDIUM PHOSPHIDES ♦ LANTHANUM SELENIDES ♦ LASER RADIATION ♦ POWER DENSITY ♦ QUANTUM DOTS ♦ STIMULATED EMISSION ♦ THZ RANGE 100-1000|
|Abstract||We demonstrate the generation of 92 nm (−3 dB bandwidth) flat-topped ultrabroad stimulation emission from a chirped InAs/InP quantum dot (QD) laser. A greatly enhanced bandwidth of the gain spectrum is achieved, which is attributed to the additionally broadened quantum dot energy levels utilizing gradually changed height of QDs in the stacked active layers. The laser exhibits a maximum output power of 0.35 W under pulsed conditions, and the average spectral power density of above 3.8 mW/nm is obtained. The ultrabroad lasing spectrum in the wavelength interval of 1.49–1.61 μm covering S-C-L bands makes such a laser potentially useful as an optical source for various applications being compatible with silica fibers.|
|Learning Resource Type||Article|
|Publisher Place||United States|
|Journal||Applied Physics Letters|
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