|Author||Han, Qi ♦ Yan, Baoming ♦ Jia, Zhenzhao ♦ Niu, Jingjing ♦ Yu, Dapeng ♦ Wu, Xiaosong|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CALCIUM ♦ DEPOSITION ♦ DOPED MATERIALS ♦ GRAPHENE ♦ IMPURITIES ♦ LAYERS ♦ SEMICONDUCTOR MATERIALS ♦ TWO-DIMENSIONAL SYSTEMS|
|Abstract||Impurity doping plays a pivotal role in semiconductor electronics. We study the doping effect in a two-dimensional semiconductor, gapped bilayer graphene. By employing in situ deposition of calcium on the bilayer graphene, dopants are controllably introduced. Low temperature transport results show a variable range hopping conduction near the charge neutrality point persisting up to 50 K, providing evidence for the impurity levels inside the gap. Our experiment confirms a predicted peculiar effect in the gapped bilayer graphene, i.e., formation of in-gap states even if the bare impurity level lies in the conduction band. The result provides perspective on the effect of doping and impurity levels in semiconducting bilayer graphene.|
|Learning Resource Type||Article|
|Publisher Place||United States|
|Journal||Applied Physics Letters|
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