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Author Han, Qi ♦ Yan, Baoming ♦ Jia, Zhenzhao ♦ Niu, Jingjing ♦ Yu, Dapeng ♦ Wu, Xiaosong
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CALCIUM ♦ DEPOSITION ♦ DOPED MATERIALS ♦ GRAPHENE ♦ IMPURITIES ♦ LAYERS ♦ SEMICONDUCTOR MATERIALS ♦ TWO-DIMENSIONAL SYSTEMS
Abstract Impurity doping plays a pivotal role in semiconductor electronics. We study the doping effect in a two-dimensional semiconductor, gapped bilayer graphene. By employing in situ deposition of calcium on the bilayer graphene, dopants are controllably introduced. Low temperature transport results show a variable range hopping conduction near the charge neutrality point persisting up to 50 K, providing evidence for the impurity levels inside the gap. Our experiment confirms a predicted peculiar effect in the gapped bilayer graphene, i.e., formation of in-gap states even if the bare impurity level lies in the conduction band. The result provides perspective on the effect of doping and impurity levels in semiconducting bilayer graphene.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-10-19
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 16


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