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Author Herrera Diez, L. ♦ García-Sánchez, F. ♦ Adam, J. -P. ♦ Devolder, T. ♦ Eimer, S. ♦ El Hadri, M. S. ♦ Ravelosona, D. ♦ Lamperti, A. ♦ Mantovan, R. ♦ Ocker, B.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ANISOTROPY ♦ APPROXIMATIONS ♦ CREEP ♦ HELIUM IONS ♦ INTERFACES ♦ IRRADIATION ♦ MAGNESIUM OXIDES ♦ MAGNETIC FIELDS ♦ MAGNETIZATION ♦ RADIATION DOSES ♦ SATURATION ♦ STOICHIOMETRY ♦ THIN FILMS ♦ TUNING ♦ WALLS
Abstract This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-20
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 3


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