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Author Joshi, Shraddha ♦ Acharya, Smita
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BISMUTH ADDITIONS ♦ DIELECTRIC MATERIALS ♦ DIELECTRIC PROPERTIES ♦ DOPED MATERIALS ♦ PERMITTIVITY ♦ PZT ♦ SINTERING ♦ SOL-GEL PROCESS ♦ SYMMETRY ♦ TEMPERATURE DEPENDENCE ♦ TEMPERATURE RANGE 0273-0400 K ♦ TRIGONAL LATTICES ♦ X RADIATION ♦ X-RAY DIFFRACTION
Abstract In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of doped PZT.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-23
Publisher Place United States
Volume Number 1731
Issue Number 1


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