|Author||Pooth, Alexander ♦ Uren, Michael J. ♦ Cäsar, Markus ♦ Kuball, Martin ♦ Martin, Trevor|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ BUFFERS ♦ CHARGE TRANSPORT ♦ DOPED MATERIALS ♦ ELECTRON BEAM INJECTION ♦ FIELD EFFECT TRANSISTORS ♦ GALLIUM NITRIDES ♦ SIMULATION ♦ SUBSTRATES ♦ TRAPPING|
|Abstract||Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.|
|Learning Resource Type||Article|
|Publisher Place||United States|
|Journal||Journal of Applied Physics|
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