Thumbnail
Access Restriction
Open

Author Pooth, Alexander ♦ Uren, Michael J. ♦ Cäsar, Markus ♦ Kuball, Martin ♦ Martin, Trevor
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ BUFFERS ♦ CHARGE TRANSPORT ♦ DOPED MATERIALS ♦ ELECTRON BEAM INJECTION ♦ FIELD EFFECT TRANSISTORS ♦ GALLIUM NITRIDES ♦ SIMULATION ♦ SUBSTRATES ♦ TRAPPING
Abstract Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 21


Open content in new tab

   Open content in new tab