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Author Wang, Wei ♦ D.'Costa, Vijay Richard ♦ Dong, Yuan ♦ Liang, Gengchiau ♦ Yeo, Yee-Chia ♦ Loke, Wan Khai ♦ Yoon, Soon Fatt ♦ Yin, Tingting ♦ Shen, Zexiang ♦ Zhang, Zheng ♦ Pan, Jisheng ♦ Tok, Eng Soon
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALIGNMENT ♦ BUFFERS ♦ FILMS ♦ GERMANIUM PHOSPHIDES ♦ INTERFACES ♦ LAYERS ♦ MOLECULAR BEAM EPITAXY ♦ MOLECULAR BEAMS ♦ RAMAN SPECTROSCOPY ♦ RESOLUTION ♦ STRAINS ♦ SUBSTRATES ♦ TIN COMPOUNDS ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ VALENCE ♦ X-RAY DIFFRACTION ♦ X-RAY PHOTOELECTRON SPECTROSCOPY
Abstract Ge{sub 0.94}Sn{sub 0.06} films with high tensile strain were grown on strain-relaxed In{sub y}Ga{sub 1−y}P virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge{sub 0.94}Sn{sub 0.06} film was varied by changing the In mole fraction in In{sub x}Ga{sub 1−x}P buffer layer. The tensile strained Ge{sub 0.94}Sn{sub 0.06} films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge{sub 0.94}Sn{sub 0.06} was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was not relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge{sub 0.94}Sn{sub 0.06} on In{sub 0.77}Ga{sub 0.23}P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge{sub 0.94}Sn{sub 0.06}/In{sub 0.77}Ga{sub 0.23}P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 12


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