Thumbnail
Access Restriction
Open

Author Moutinho, H. R. ♦ Dhere, R. G. ♦ Al-Jassim, M. M. ♦ Levi, D. H. ♦ Kazmerski, L. L. ♦ Mayo, B.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CADMIUM COMPOUNDS ♦ TELLURIUM COMPOUNDS ♦ THIN FILMS ♦ CADMIUM TELLURIDES ♦ DEPOSITION ♦ TEMPERATURE DEPENDENCE ♦ RECRYSTALLIZATION ♦ LATTICE PARAMETERS
Abstract We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350&hthinsp;{degree}C and completely recrystallized after the same treatment at 400&hthinsp;{degree}C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures. {copyright} {ital 1999 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Department National Renewable Energy Laboratory
Publisher Place United States
Volume Number 462
Issue Number 1
Technical Publication No. CONF-980935-
Organization National Renewable Energy Laboratory


Open content in new tab

   Open content in new tab