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Author Tokas, R. B. ♦ Jena, Shuvendu ♦ Thakur, S. ♦ Sahoo, N. K. ♦ Haque, S. Maidul ♦ Rao, K. Divakar
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ANISOTROPY ♦ DEPOSITION ♦ ELECTRON BEAMS ♦ ELLIPSOMETRY ♦ EVAPORATION ♦ HAFNIUM OXIDES ♦ MICROSTRUCTURE ♦ REFRACTIVE INDEX ♦ REFRACTORIES ♦ SILICON ♦ SUBSTRATES ♦ THIN FILMS ♦ TOOLS ♦ VISIBLE RADIATION
Abstract In present work, HfO{sub 2} thin films have been deposited at various oblique incidences on Si substrates by electron beam evaporation. These refractory oxide films exhibited anisotropy in refractive index predictably due to special columnar microstructure. Spectroscopic ellipsometry being a powerful tool for optical characterization has been employed to investigate optical anisotropy. It was observed that the film deposited at glancing angle (80°) exhibits the highest optical anisotropy. Further, anisotropy was noticed to decrease with lower values of deposition angles while effective refractive index depicts opposite trend. Variation in refractive index and anisotropy has been explained in light of atomic shadowing during growth of thin films at oblique angles.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-23
Publisher Place United States
Volume Number 1731
Issue Number 1


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