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Author Liang, Jiale ♦ Yeh, Stanley ♦ Wong, S Simon ♦ Wong, H-S Philip
Source ACM Digital Library
Content type Text
Publisher Association for Computing Machinery (ACM)
File Format PDF
Copyright Year ©2013
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Cu wire ♦ Interconnect ♦ Cross-point memory array ♦ Energy consumption ♦ Latency ♦ Read margin ♦ Reliability ♦ Scaling ♦ Write margin
Abstract The impact of wordline/bitline metal wire scaling on the write/read performance, energy consumption, speed, and reliability of the cross-point memory array is quantitatively studied for technology nodes down to single-digit nm. The impending resistivity increase in the Cu wires is found to cause significant decrease of both write and read window margins at the regime when electron surface scattering and grain boundary scattering are substantial. At deeply-scaled device dimensions, the wire energy dissipation and wire latency become comparable to or even exceed the intrinsic values of memory cells. The large current density flowing through the wordlines/bitlines raises additional reliability concerns for the cross-point memory array. All these issues are exacerbated at smaller memory resistance values and larger memory array sizes. They thereby impose strict constraints on the memory device design and preclude the realization of large-scale cross-point memory array with minimum feature sizes beyond the 10 nm node. A rethink in the design methodology of cross-point memory to incorporate and mitigate the scaling effects of wordline/bitline is necessary. Possible solutions include the use of memory wires with better conductivity and scalability, memory arrays with smaller partition sizes, and memory elements with larger resistance values and resistance ratios.
ISSN 15504832
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2013-02-01
Publisher Place New York
e-ISSN 15504840
Journal ACM Journal on Emerging Technologies in Computing Systems (JETC)
Volume Number 9
Issue Number 1
Page Count 14
Starting Page 1
Ending Page 14

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Source: ACM Digital Library