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Author Im, H. -J. ♦ Ding, Y. ♦ Pelz, J. P. ♦ Heying, B. ♦ Speck, J. S.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ DISLOCATIONS ♦ ELECTRON EMISSION ♦ MICROSCOPY ♦ MOLECULAR BEAM EPITAXY ♦ RESOLUTION ♦ ULTRAHIGH VACUUM
Abstract Threading dislocations (TDs) of molecular beam epitaxy grown GaN film were studied with ultrahigh vacuum ballistic electron emission microscopy in order to quantify any fixed negative charge at identifiable TDs, with {approx}3 nm spatial and {approx}10 meV local barrier resolution. In contrast to several prior studies, we find no indication of fixed negative dislocation charge at specific TD structures, with a conservative upper limit of {approx}0.25 e{sup -} per c -axis unit cell. We do observe evidence of positive surface charge at TDs and at GaN step edges, which may be due to local piezoelectric fields.
ISSN 00319007
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-09-03
Publisher Place United States
Journal Physical Review Letters
Volume Number 87
Issue Number 10


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