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Author Deitz, Julia I. ♦ McComb, David W. ♦ Carnevale, Santino D. ♦ De Graef, Marc ♦ Grassman, Tyler J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BEAMS ♦ DIFFRACTION ♦ ELECTRON CHANNELING ♦ ELECTRONS ♦ EPITAXY ♦ GALLIUM ARSENIDES ♦ GEOMETRY ♦ IMAGES ♦ INDIUM ARSENIDES ♦ MATRICES ♦ QUANTUM DOTS ♦ SAMPLE PREPARATION ♦ SURFACES ♦ TRANSMISSION ELECTRON MICROSCOPY
Abstract A method for characterization of encapsulated epitaxial quantum dots (QD) in plan-view geometry using electron channeling contrast imaging (ECCI) is presented. The efficacy of the method, which requires minimal sample preparation, is demonstrated with proof-of-concept data from encapsulated (sub-surface) epitaxial InAs QDs within a GaAs matrix. Imaging of the QDs under multiple diffraction conditions is presented, establishing that ECCI can provide effectively identical visualization capabilities as conventional two-beam transmission electron microscopy. This method facilitates rapid, non-destructive characterization of sub-surface QDs giving immediate access to valuable nanostructural information.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-08
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 6


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