|Author||Deitz, Julia I. ♦ McComb, David W. ♦ Carnevale, Santino D. ♦ De Graef, Marc ♦ Grassman, Tyler J.|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BEAMS ♦ DIFFRACTION ♦ ELECTRON CHANNELING ♦ ELECTRONS ♦ EPITAXY ♦ GALLIUM ARSENIDES ♦ GEOMETRY ♦ IMAGES ♦ INDIUM ARSENIDES ♦ MATRICES ♦ QUANTUM DOTS ♦ SAMPLE PREPARATION ♦ SURFACES ♦ TRANSMISSION ELECTRON MICROSCOPY|
|Abstract||A method for characterization of encapsulated epitaxial quantum dots (QD) in plan-view geometry using electron channeling contrast imaging (ECCI) is presented. The efficacy of the method, which requires minimal sample preparation, is demonstrated with proof-of-concept data from encapsulated (sub-surface) epitaxial InAs QDs within a GaAs matrix. Imaging of the QDs under multiple diffraction conditions is presented, establishing that ECCI can provide effectively identical visualization capabilities as conventional two-beam transmission electron microscopy. This method facilitates rapid, non-destructive characterization of sub-surface QDs giving immediate access to valuable nanostructural information.|
|Learning Resource Type||Article|
|Publisher Place||United States|
|Journal||Applied Physics Letters|
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