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Author Rehman, Gul ♦ Shafiq, M. ♦ Ahmad, Rashid ♦ Jalali Asadabadi, S. ♦ Maqbool, M. ♦ Khan, Imad ♦ Rahnamaye Aliabad, H. ♦ Ahmad, Iftikhar
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2016
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword III–V semiconductors ♦ optical materials ♦ electronic band structure ♦ non-regular TB-mBJ ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics
Abstract The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III–V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha’s modified Becke–Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III–V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2016-05-05
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 45
Issue Number 7
Page Count 10
Starting Page 3314
Ending Page 3323


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Source: SpringerLink