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Author Zhang, Z. L. ♦ Xiao, Z. G. ♦ Wu, X. B. ♦ Yu, Z. S.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2000
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Cobalt thin films ♦ microstructure ♦ transmission electron microscopy (TEM) ♦ silicide ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract The microstructure of as-deposited Co thin films on silicon (001) substrate was characterized by TEM using wedge-shaped planar-view samples. Selected area electron diffraction showed that the as deposited Co thin films were composed of Co (α) and that no interfacial reaction took place between Co thin films and the Si substrate. The microstructure of Co thin films annealed at 250°C for 30 min was also investigated by using conventional planar-view samples. The analysis of selected area electron diffraction indicates that Co thin films react entirely with the Si substrate, and a silicide layer forms at the Co/Si interface. Dark field images clearly indicate that the interfacial layer consists of Co$_{2}$Si in irregular stripes and CoSi as fine particles but no CoSi$_{2}$ forms.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2000-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 29
Issue Number 5
Page Count 5
Starting Page 617
Ending Page 621


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Source: SpringerLink