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Author Watanabe, Hiroshi ♦ Motozawa, Mitsutake ♦ Suto, Ken ♦ Nishizawa, Jun Ichi
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©1998
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword AlGaAs ♦ deep level ♦ liquid phase epitaxy (LPE) ♦ photocapacitance (PHCAP) ♦ stoichiometry ♦ temperature difference method under controlled vapor pressure (TDM-CVP) ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract Photocapacitance (PHCAP) and photoluminescence (PL) measurements were applied to unintentionally doped p-type Al$_{0.38}$Ga$_{0.62}$As grown by liquid phase epitaxy using the temperature difference method under controlled vapor pressure. PHCAP spectra revealed three dominant deep levels at E$_{v}$+0.9, E$_{v}$ + 1.45, and E$_{v}$+1.96 eV, and a deep level at E$_{v}$+0.9−1.5 eV which was not neutralized by forward bias injection. These level densities increase with increasing arsenic vapor pressure and net shallow acceptor density. Furthermore, PL spectra reveal a deep level at 1.6–1.7 eV. The PL intensity of this deep level increases with increasing arsenic vapor pressure. These deep levels are thought to be associated with excess As.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1998-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 27
Issue Number 8
Page Count 6
Starting Page 979
Ending Page 984

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Source: SpringerLink